Method of fabricating semiconductor device

ABSTRACT

A method of fabricating a semiconductor device in which a plurality of conductive lines having a fine pitch and a uniform thickness can be formed is provided. The method includes forming a plurality of first conductive patterns in a insulation layer as closed curves, forming a plurality of mask patterns on the insulation layer, the mask patterns exposing end portions of each of the first conductive patterns, and forming a plurality of second conductive patterns in the insulation layer as lines by removing the end portions of each of the first conductive patterns.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority under 35 USC § 119 to Korean PatentApplication No. 10-2007-0066187 filed on Jul. 2, 2007 in the KoreanIntellectual Property Office, the contents of which are incorporatedherein by reference in their entirety.

BACKGROUND

1. Technical Field

The present invention relates to a method of fabricating a semiconductordevice, and, more particularly, to a method of fabricating asemiconductor device in which conductive lines are buried in asemiconductor substrate.

2. Description of the Related Art

As the integration density of semiconductor devices increases, the pitchof patterns in semiconductor devices is becoming increasingly smaller.However, due to limits in the resolution of lithography, it is difficultto form micro-patterns such as line-and-space patterns.

In order to address this difficulty, methods of forming micro-patternsusing spacer patterns as masks have been developed. These methodstypically involve forming dummy patterns, forming spacer patterns onboth sides of each of the dummy patterns and forming micro-patternsusing the spacer patterns as masks. These techniques require manyadditional processing steps, however, and thus result in more expensivefabrication of the semiconductor devices. Consequently, a need remainsfor a simpler and less expensive method of forming semiconductor deviceshaving fine pattern pitch.

SUMMARY

Aspects of the present invention provide a method of fabricating asemiconductor device in which conductive lines having a fine pitch and auniform thickness can be buried in a semiconductor substrate.

According to an aspect of the present invention, there is provided amethod of fabricating a semiconductor device, the method including:forming a plurality of first conductive patterns in a insulation layeras closed curves; forming a plurality of mask patterns on the insulationlayer, the mask patterns exposing end portions of each of the firstconductive patterns; and forming a plurality of second conductivepatterns in the insulation layer as lines by removing the end portionsof each of the first conductive patterns.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects and features of the present invention willbecome apparent by describing in detail exemplary embodiments thereofwith reference to the attached drawings, in which FIGS. 1 through 12Billustrate a method of fabricating a semiconductor device according toan exemplary embodiment of the present invention.

DETAILED DESCRIPTION

The present invention will now be described more fully with reference tothe accompanying drawings, in which exemplary embodiments of theinvention are shown. The invention may, however, be embodied in manydifferent forms and should not be construed as being limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the concept of the invention to those skilled in the art.

It will be understood that when an element or a layer is referred to asbeing “on” or “above” another element or layer, it can be directly on orabove the other element or layer or intervening elements or layers maybe present. In contrast, when an element or a layer is referred to asbeing “directly on” or “directly above” another element or layer, thereare no intervening elements or layers present. Like numbers refer tolike elements throughout. As used herein the term “and/or” includes anyand all combinations of one or more of the associated listed items.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, components, regions, layersand/or sections, these elements, components, regions, layers and/orsections should not be limited by these terms. These terms are only usedto distinguish one element, component, region, layer or section fromanother element, component, region, layer or section. Thus, a firstelement, component, region, layer or section discussed below could betermed a second element, component, region, layer or section withoutdeparting from the teachings of the present invention.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a,” “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this invention belongs. It will befurther understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

Furthermore, relative terms such as “below,” “beneath,” or “lower,”“above,” and “upper” may be used herein to describe one element'srelationship to another element as illustrated in the accompanyingdrawings. It will be understood that relative terms are intended toencompass different orientations of the device in addition to theorientation depicted in the accompanying drawings. For example, if thedevice in the accompanying drawings is turned over, elements describedas being on the “lower” side of other elements would then be oriented on“upper” sides of the other elements. Similarly, if the device in one ofthe figures is turned over, elements described as “below” or “beneath”other elements would then be oriented “above” the other elements.Therefore, the exemplary terms “below” and “beneath” can, therefore,encompass both an orientation of above and below.

Embodiments of the present invention are described herein with referenceto cross-section illustrations that are schematic illustrations ofidealized embodiments of the present invention. As such, variations fromthe shapes of the illustrations as a result, for example, ofmanufacturing techniques and/or tolerances, are to be expected. Thus,embodiments of the present invention should not be construed as limitedto the particular shapes of regions illustrated herein but are toinclude deviations in shapes that result, for example, frommanufacturing.

A method of fabricating a semiconductor device according to an exemplaryembodiment of the present invention will hereinafter be described indetail with reference to FIGS. 1 through 12B.

FIGS. 1 through 12B illustrate a method of fabricating a semiconductordevice according to an exemplary embodiment of the present invention.Specifically, FIGS. 2A, 6A, 9A, 11A and 12A illustrate plan views forexplaining a method of fabricating a semiconductor device according toan exemplary embodiment of the present invention, and FIGS. 2B, 6B, 9B,11B and 12B illustrate cross-sectional views taken along lines A-A′,B-B′, and C-C′ of FIGS. 2A, 6A, 9A, 11A and 12A, respectively.

Referring to FIG. 1, a semiconductor substrate 100 which is divided intoa cell region Cell and a peripheral circuit region Peri is prepared. Thesemiconductor substrate 100 may include bulk silicon or bulksilicon-germanium. Alternatively, the semiconductor substrate 100 mayinclude bulk silicon or bulk silicon-germanium and a silicon epitaxiallayer or a silicon-germanium epitaxial layer deposited on the bulksilicon or the bulk silicon-germanium. Device isolation layers 102 areformed in the semiconductor substrate 100 by performing a shallow trenchisolation (STI) operation. As a result of the formation of the deviceisolation layers 102, a plurality of active regions 104 may be formed inthe cell region Cell and in the peripheral circuit region Peri,respectively.

Thereafter, first and second hard mask layers 111 and 113 aresequentially formed on the semiconductor substrate 100 including theactive regions 104. The first and second hard mask layers 111 and 113may be formed of a material having etching selectivity with respect tothe semiconductor substrate 100. For example, the first hard mask layer111 may include a conductive layer, and the second hard mask layer 113may include an insulation layer. The first hard mask layer 111 willhereinafter be referred to as the first conductive layer 111, and thesecond hard mask layer 113 will hereinafter be referred to as the firstinsulation layer 113. In this embodiment, the first conductive layer 111and the first insulation layer 113 are sequentially formed on thesemiconductor substrate 100. A polysilicon layer may be deposited on thesemiconductor substrate 100 as the first conductive layer 111, and asilicon nitride layer may be formed on the first conductive layer 111 asthe first insulation layer 113.

In order to form a gate electrode in the peripheral circuit region Peri,an insulation layer (not shown) for forming a gate may be formed on thesemiconductor substrate 100 before the formation of the first conductivelayer 111. The insulation layer for forming a gate may include a siliconoxide layer or a high-dielectric layer.

The first conductive layer 111 may be used to form a mask in the cellregion Cell, and to form a conductive pattern in the peripheral circuitregion Peri.

Referring to FIGS. 2A and 2B, first insulation patterns 114 are formedon the first conductive layer 111 as line-and-space patterns bypatterning the first insulation layer 113 in the cell region Cell. Thefirst insulation patterns 114 extend across the active regions 104 inthe cell region Cell of the semiconductor substrate 100. During theformation of the first insulation patterns 114 in the cell region Cell,the first conductive layer 111 and the first insulation layer 113 in theperipheral circuit region Peri are not patterned and thus remain intacton the semiconductor substrate 100. That is, the peripheral circuitregion Peri of the semiconductor substrate 100 is still covered with thefirst conductive layer 111 and a first insulation layer 113′.

Referring to FIG. 3, a spacer layer 120 is formed on the entire surfaceof the semiconductor substrate 100 on which the first insulationpatterns 114 are formed. The spacer layer 120 is formed in the cellregion Cell, conforming to the shape of the first insulation patterns114. The spacer layer 120 is also formed in the peripheral circuitregion Peri and is deposited on the first insulation layer 113′. Thespacer layer 120 may be formed of a material having etching selectivityto the first insulation patterns 114. Specifically, the spacer layer 120may be formed of a material having high etching selectivity to the firstinsulation patterns 114. For example, the spacer layer 120 may be formedby depositing a polysilicon layer on the semiconductor substrate 100 sothat the polysilicon layer can conform to the shape of the firstinsulation patterns 114. The spacer layer 120 may be formed using achemical vapor deposition (CVD) method or an atomic layer deposition(ALD) method. The pitch of fine patterns to be formed in the cell regionCell by a subsequent process may be determined by the thickness of thespacer layer 120.

In order to form a spacer pattern as a line on both sides of each of thefirst insulation patterns 114, portions of the spacer layer 120 on thesidewalls of each of the first insulation patterns 114 in a boundaryportion II of the cell region Cell may be etched away. During an etchingoperation for removing the portions of the spacer layer 120 on thesidewalls of each of the first insulation patterns 114 in the boundaryportion II of the cell region Cell, the first insulation patterns 114 inthe boundary area II may also be etched away so that a step differencecan be generated between a middle portion I and the boundary portion IIof the cell region Cell. In order to reduce the step difference betweenthe middle portion I and the boundary portion II of the cell regionCell, an insulation material may be deposited on the semiconductorsubstrate 100, and then a planarization operation may be performed. Inthis case, the step difference between the middle portion I and theboundary portion II of the cell region Cell may be reduced to someextent. However, the insulation material may not be able to becompletely planarized due to its deposition properties, thereby makingit difficult to form conductive patterns in respective correspondingtrenches to a uniform thickness.

Therefore, in this embodiment, a second insulation layer 130 is formedon the spacer layer 120 so that the empty spaces between the firstinsulation patterns 114 can be filled with the second insulation layer130, as illustrated in FIG. 4. The second insulation layer 130 may beformed of a material having etching selectivity to the spacer layer 120.The second insulation layer 130 may be formed of the same material asthe first insulation patterns 114.

Thereafter, referring to FIG. 5, the top surfaces of the firstinsulation patterns 114 are exposed by selectively etching the secondinsulation layer 130 and the spacer layer 120. Specifically, the secondinsulation layer 130 is etched using the spacer layer 120 as an etchingstopper, and then the spacer layer 120 is etched until the top surfacesof the first insulation patterns 114 are exposed. An etch-back operationor a chemical mechanical polishing (CMP) operation may be performed inorder to expose the top surfaces of the first insulation patterns 114.As a result of the etch-back operation or the CMP operation, the spacerlayer 120 and the second insulation layer 130 in the peripheral circuitregion Peri are all removed, and a plurality of spacer patterns 122 anda plurality of second insulation patterns 132 are formed in the cellregion Cell.

The spacer patterns 122 are disposed among the first insulation patterns114, and the second insulation patterns 132 are disposed on therespective spacer patterns 122. The spacer patterns 122 cover thesidewalls of the first insulation patterns 114. That is, the spacerpatterns 122 may be formed as closed curves and cover the sidewalls ofthe first insulation patterns 114.

During the formation of the spacer patterns 122, the first insulationpatterns 114 and the second insulation patterns 132 may be planarized sothat the top surfaces of the first insulation patterns 114 and thesecond insulation patterns 132 can become level with the top surfaces ofthe spacer patterns 122.

Referring to FIGS. 6A and 6B, portions of the spacer patterns 122between the first insulation patterns 114 and the respective secondinsulation patterns 132 are removed, and portions of the firstconductive layer 111 exposed between the first insulation patterns 114and the respective second insulation patterns 132 are etched so thatportions of the semiconductor substrate 100 in the cell region Cell canbe exposed. Since the spacer patterns 122 are formed of a materialhaving etching selectivity to the first insulation patterns 114 and thesecond insulation patterns 132, the spacer patterns 122 may be partiallyremoved by performing a dry etching operation using the first insulationpatterns 114 and the second insulation patterns 132 as etching masks. Asa result of the dry etching operation, a plurality of first maskpatterns 116, a plurality of second mask patterns 134 and a plurality ofopenings which are disposed between the first mask patterns 116 and therespective second mask patterns 134 and expose portions of the secondsubstrate 100 as closed curves are formed in the cell region Cell of thesemiconductor substrate 100. The first mask patterns 116 include thefirst insulation patterns 114, respectively, and the first conductivepatterns 112, respectively. The second mask patterns 134 include thefirst conductive patterns 112, respectively, a plurality of patterns124, respectively, and the second insulation patterns 132, respectively.The patterns 124 are obtained by partially removing the second spacerpatterns 122. Thereafter, the semiconductor substrate 100 is etched to apredetermined depth using the first mask patterns 116 and the secondmask patterns 134 as etch masks, thereby forming a plurality of trenches106 in the semiconductor substrate 100. Specifically, the trenches 106are formed by performing a dry etching operation on the active regions104 and the device isolation layers 102 in the cell region Cell. Thetrenches 106 may be formed as closed curves that extend across theactive regions 104 in the cell region Cell of the semiconductorsubstrate 100.

Referring to FIG. 7, a second conductive layer 140 is formed on theentire surface of the semiconductor substrate 100. Specifically, aninsulation layer (not shown) for forming a gate is formed so that thesidewalls of each of the trenches 106 and the sidewalls and the topsurface of each of the first mask patterns 116 and the second maskpatterns 134 can be covered with the insulation layer for forming agate. The insulation layer for forming a gate may include a siliconoxide layer or a high-dielectric layer. The second conductive layer 140is a conductive layer formed in the cell region Cell for forming a gate.The second conductive layer 140 may be formed of a material such thatthe trenches 106 can be completely filled with the second conductivelayer 140. For example, the second conductive layer 140 may be formed bydepositing a titanium nitride (TiN) layer. The second conductive layer140 is formed in the trenches 106 and on the first mask patterns 116 andthe second mask patterns 134. Since the first mask patterns 116, thesecond mask patterns 134, and a first insulation layer 113′ in theperipheral circuit region Peri are all planarized, the second conductivelayer 140 may be formed on the first mask patterns 116, the second maskpatterns 134, and the first insulation layer 113′ to a substantiallyuniform thickness.

Referring to FIG. 8, a plurality of second conductive patterns 142 a anda plurality of second conductive patterns 142 b are formed by etchingthe second conductive layer 140. The trenches 106 are partially filledwith the respective second conductive patterns 142 a and 142 b.Specifically, a dry etching operation is performed on the secondconductive layer 140 so that the second conductive layer 140 onlypartially remains in the trenches 106. Since the dry etching operationis performed until the second conductive layer 140 remains onlypartially in the trenches 106, the first mask patterns 116, the secondmask patterns 134 and the first insulation layer 113′ may be partiallyetched away by the dry etching operation.

The second conductive patterns 142 a and 142 b are respectively formedin the trenches 106 and have the same shape as the trenches 106, i.e., aclosed curve shape. The top surfaces of the second conductive patterns142 a and 142 b are below the surfaces of the active regions 104. Thesecond conductive patterns 142 a and 142 b may be formed in therespective trenches 106 to a uniform thickness by performing a dryetching operation on the second conductive layer 140.

Thereafter, referring to FIGS. 9A and 9B, a plurality of cappingpatterns 152 a are formed in the respective second conductive patterns142 a, and a plurality of capping patterns 152 b are formed in therespective second conductive patterns 142 b. Specifically, a cappinglayer (not shown) is formed on the semiconductor substrate 100 so thatthe trenches 106 and the empty spaces between the first mask patterns116 and the respective mask patterns 134 can be completely filled withthe capping layer. Thereafter, the capping layer is planarized, therebyforming the capping patterns 152 a and 152 b. The capping layer mayinclude a silicon nitride layer. The capping patterns 152 a and 152 bmay be formed by performing an anisotropic etching operation on thecapping layer. The capping layer may be etched until the top surfaces ofthe first conductive patterns 112 are exposed. That is, during theformation of the capping patterns 152 a and 152 b, the first insulationpatterns 114 of the first mask patterns 116 and the second insulationpatterns 132 of the second mask patterns 134 are all etched away. As aresult, the first conductive patterns 112 in the cell region Cell areexposed, and the first conductive layer 111 in the peripheral circuitregion Peri is exposed.

Thereafter, a plurality of first photoresist patterns 160 for formingconductive patterns in the peripheral circuit region Peri are formed onthe first conductive layer 111 in the peripheral circuit region Peri.Since conductive patterns generally formed in a peripheral circuitregion have a relatively large line width and are relatively distantapart from one another, the first photoresist pattern 160 is formed inthe peripheral circuit region Peri so that larger patterns than those inthe cell region Cell can be formed in the peripheral circuit regionPeri.

Thereafter, referring to FIG. 10, a plurality of conductive patterns 118are formed in the peripheral circuit region Peri using the firstphotoresist patterns 160. Specifically, the conductive patterns 118 areformed in the peripheral circuit region Peri by patterning the firstconductive layer 111 using the first photoresist patterns 160. Duringthe formation of the conductive patterns 118, the first conductivepatterns 112 and the capping patterns 152 a and 152 b are partiallyetched away.

As a result, the formation of the second conductive patterns 142 a and142 b in the semiconductor substrate 100 as closed curves is completed.The second conductive patterns 142 a and 142 b extend to the deviceisolation layers 102 across the active regions 104 in the cell regionCell, and are buried in the semiconductor substrate 100. In the cellregion Cell, the surface of the semiconductor substrate 100 and the topsurfaces of a plurality of capping patterns 152 a′ and a plurality ofcapping patterns 152 b′ are exposed. The surface of the semiconductorsubstrate 100 may be level with the top surfaces of the capping patterns152 a′ and 152 b′. In the peripheral circuit region Peri, the conductivepatterns 118 are formed on the semiconductor substrate 100. After theformation of the conductive patterns 118 in the peripheral circuitregion Peri, the first photoresist pattern may be removed by performingan ashing operation.

Thereafter, the second conductive patterns 142 a and 142 b are dividedinto as many pairs of conductive line patterns as there are secondconductive patterns 142 a and 142 b by removing portions of the secondconductive patterns 142 a and 142 b in the boundary portion II of thecell region Cell.

Specifically, referring to FIGS. 11A and 11B, a photoresist layer (notshown) is formed on the entire surface of the semiconductor substrate100 so that the conductive patterns 118 in the peripheral circuit regioncan be completely buried in the photoresist layer. Thereafter, aplurality of second photoresist patterns 170 which expose the boundaryportion II of the cell region Cell are formed by patterning thephotoresist layer.

Then, a dry etching operation is performed using the second photoresistpatterns as etch masks so that portions of the capping patterns 152 b′in the boundary portion II of the cell region Cell and the portions ofthe second conductive patterns 142 a and 142 b in the boundary portionII of the cell region Cell can be selectively etched away. During thedry etching operation, an etching gas having etching selectivity to thedevice isolation layers 102 in the semiconductor substrate 100 may beused. For example, if the second conductive patterns 142 a and 142 binclude a titanium nitride layer, a mixture of Cl, BCl3 and Ar may beused as an etching gas for removing the portions of the secondconductive patterns 142 a and 142 b in the boundary portion II of thecell region 170.

Referring to FIGS. 12A and 12B, a plurality of pairs of conductive lines142 a are formed in the cell region Cell of the semiconductor substrate100. The conductive lines 142 a extend across the active regions 104 andare buried in the semiconductor substrate 100. A plurality of trenchesresulting from the removal of the portions of the second conductivepatterns 142 a and 142 b in the boundary portion II of the cell regionCell are filled with an insulation material 182 so that the surface ofthe semiconductor substrate 100 can be planarized.

In this manner, a plurality of gate lines 142 a having a fine pitch anda uniform thickness are formed in the middle portion I of the cellregion Cell and are buried in the semiconductor substrate 100.

Thereafter, impurity ions are implanted into active regions 104 on bothsides of each of the gate lines 142 a, thereby forming source/drainregions 192. Therefore, a plurality of transistors having the gate lines142 a that are buried in the semiconductor substrate 100 are formed inthe cell region Cell.

As described above, the gate lines 142 a are formed in the middleportion I of the cell region Cell by forming the second conductivepatterns 142 a and 142 b throughout the entire cell region Cell to auniform thickness as closed curves and selectively etching the portionsof the second conductive patterns 142 a and 142 b in the boundaryportion II of the cell region Cell. Thus, the gate lines 142 a have auniform thickness and a fine pitch. Therefore, it is possible to form aplurality of gate electrodes having a uniform size in the cell regionCell and thus to uniformly maintain the properties of each cell.

As described above, according to some embodiments of the presentinvention, a plurality of trenches are formed in a semiconductorsubstrate as closed curves by forming a plurality of mask patterns onthe semiconductor substrate to a uniform thickness. Therefore, it ispossible to uniformly deposit a conductive layer in each of thetrenches. In addition, it is possible to form a plurality of conductivepatterns having a uniform thickness in the respective trenches as closedcurves by performing an anisotropic etching operation on the conductivelayer.

In addition, according to some embodiments of the present invention,after the formation of conductive patterns in respective correspondingtrenches, a semiconductor substrate is planarized, and end portions ofthe conductive patterns are selectively removed, thereby forming as manypairs of conductive lines as there were conductive patterns. Therefore,it is possible to form a plurality of conductive lines having a uniformthickness and a fine pitch in a semiconductor substrate.

Moreover, according to some embodiments of the present invention, aplurality of conductive lines are formed in a cell region of asemiconductor substrate, thereby forming a plurality of gate lines thatare buried in the semiconductor substrate and have a uniform thickness.Therefore, it is possible to uniformly maintain the properties of eachcell.

According to an aspect of the present invention, there is provided amethod of fabricating a semiconductor device, the method including:forming a plurality of first conductive patterns in a insulation layeras closed curves; forming a plurality of mask patterns on the insulationlayer, the mask patterns exposing end portions of each of the firstconductive patterns; and forming a plurality of second conductivepatterns in the insulation layer as lines by removing the end portionsof each of the first conductive patterns.

According to another aspect of the present invention, there is provideda method of fabricating a semiconductor device, the method including:defining a plurality of active regions in a substrate; forming aplurality of trenches in the substrate as closed curves, the trenchesextending across the active regions; sequentially forming a plurality ofconductive patterns and a plurality of insulation patterns in therespective trenches; forming a plurality of mask patterns on thesubstrate, the mask patterns exposing end portions of each of theconductive patterns; and forming a plurality of gate lines buried in thesubstrate by removing the end portions of each of the conductivepatterns.

According to another aspect of the present invention, there is provideda method of fabricating a semiconductor device, the method including:providing a substrate having a cell region and a peripheral circuitregion; defining a plurality of active regions in the substrate byforming a plurality of device isolation layers; depositing a conductivelayer and an insulation layer on a substantially entire surface of thesubstrate; forming a plurality of first mask patterns in the cell regionas closed curves, the first mask patterns extending across the activeregions and partially exposing the surface of the substrate; forming aplurality of trenches in the cell region as closed curves; sequentiallyforming a plurality of first conductive patterns and a plurality ofcapping patterns in the respective trenches; forming a plurality ofsecond conductive patterns in the peripheral circuit region bypatterning portions of the conductive layer in the peripheral circuitregion and portions of the insulation layer in the peripheral circuitregion, wherein the first mask patterns are removed during the formingof the second conductive patterns; forming a plurality of second maskpatterns on the substrate, the second mask patterns exposing endportions of each of the first conductive patterns; and forming aplurality of gate lines in the substrate by removing the end portions ofeach of the conductive patterns.

While the present invention has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeof the present invention as defined by the following claims.

1. A method of fabricating a semiconductor device, comprising: forming aplurality of first conductive patterns in an insulation layer as closedcurves; forming a plurality of mask patterns on the insulation layer,the mask patterns exposing end portions of each of the first conductivepatterns; and forming a plurality of second conductive patterns in theinsulation layer as lines by removing the end portions of each of thefirst conductive patterns using the mask patterns.
 2. The method ofclaim 1, wherein the insulation layer comprises a silicon layer, asilicon-germanium layer, a silicon oxide layer or a silicon nitridelayer.
 3. The method of claim 1, wherein the forming of the firstconductive patterns comprises: forming a plurality of first maskpatterns on the insulation layer as line-and-space patterns; forming aplurality of spacer patterns on sidewalls of each of the first maskpatterns; forming a plurality of second mask patterns among the spacerpatterns such that spaces among the spacer patterns are filled with thesecond mask patterns; removing portions of the spacer patterns betweenthe first mask patterns and the respective second mask patterns; forminga plurality of trenches by etching the insulation layer to apredetermined depth using the first mask patterns and the second maskpatterns; and sequentially forming a plurality of conductive patternsand a plurality of insulation patterns in the respective trenches. 4.The method of claim 3, wherein top surfaces of the first mask patterns,top surfaces of the spacer patterns, and top surfaces of the second maskpatterns are level with one another.
 5. The method of claim 4, whereinthe forming of the spacer patterns and the forming of the second maskpatterns comprises: forming a spacer layer on the insulation layer suchthat the spacer layer conforms to the shape of the first mask patterns;depositing on the spacer layer an insulation layer for forming thesecond mask patterns; and etching the spacer layer and the insulationlayer for forming the second mask patterns until the top surfaces of thefirst mask patterns are exposed.
 6. The method of claim 5, wherein thespacer patterns comprise a material having an etch selectivity to thefirst mask patterns and the second mask patterns.
 7. The method of claim6, wherein the first mask patterns and the second mask patterns comprisethe same material.
 8. The method of claim 3, wherein forming the secondconductive patterns comprises sequentially etching a portion of theinsulation patterns and the end portions of each of the first conductivepatterns using the mask patterns.
 9. A method of fabricating asemiconductor device, comprising: defining a plurality of active regionsin a substrate; forming a plurality of trenches in the substrate asclosed curves, the trenches extending across the active regions;sequentially forming a plurality of conductive patterns and a pluralityof insulation patterns in the respective trenches; forming a pluralityof mask patterns on the substrate, the mask patterns exposing endportions of each of the conductive patterns; and forming a plurality ofgate lines buried in the substrate by removing the end portions of eachof the conductive patterns using the mask patterns.
 10. The method ofclaim 9, wherein top surfaces of the insulation patterns are level witha surface of the substrate.
 11. The method of claim 9, wherein theforming of the trenches comprises: forming a plurality of first maskpatterns on the substrate as lines, the first mask patterns extendingacross the active regions; forming a plurality of spacer patterns onsidewalls of the first mask patterns; forming a plurality of second maskpatterns among the spacer patterns so that spaces among the spacerpatterns are filled with the second mask patterns; removing portions ofthe spacer patterns between the first mask patterns and the respectivesecond mask patterns; and etching the substrate to a predetermined depthusing the first mask patterns and the second mask patterns as an etchmask.
 12. The method of claim 11, wherein top surfaces of the first maskpatterns, top surfaces of the spacer patterns, and top surfaces of thesecond mask patterns are level with one another.
 13. The method of claim12, wherein the forming of the second mask patterns comprises: forming aspacer layer on the substrate such that the spacer layer conforms to theshape of the first mask patterns; depositing on the spacer layer aninsulation layer for forming the second mask patterns; and etching thespacer layer and the insulation layer for forming the second maskpatterns until the top surfaces of the first mask patterns are exposed.14. The method of claim 9, wherein the spacer patterns comprise amaterial having etching selectivity to the first mask patterns and thesecond mask patterns.
 15. The method of claim 9, wherein the forming ofthe gate lines comprises sequentially etching end portions of theinsulation patterns and the end portions of each of the conductivepatterns.
 16. The method of claim 9, further comprising forming aninsulation layer on inner sidewalls of each of the trenches, before theforming of the conductive patterns.
 17. A method of fabricating asemiconductor device, comprising: providing a substrate comprising acell region and a peripheral circuit region; defining a plurality ofactive regions in the substrate by forming a plurality of deviceisolation layers; depositing a conductive layer and an insulation layeron a substantially entire surface of the substrate; forming a pluralityof first mask patterns in the cell region as closed curves, the firstmask patterns extending across the active regions and partially exposingthe surface of the substrate; forming a plurality of trenches in thecell region as closed curves; sequentially forming a plurality of firstconductive patterns and a plurality of capping patterns in therespective trenches; forming a plurality of second conductive patternsin the peripheral circuit region by patterning portions of theconductive layer in the peripheral circuit region and portions of theinsulation layer in the peripheral circuit region, wherein the firstmask patterns are removed during the forming of the second conductivepatterns; forming a plurality of second mask patterns on the substrate,the second mask patterns exposing end portions of each of the firstconductive patterns; and forming a plurality of gate lines buried in thesubstrate by removing the end portions of each of the conductivepatterns.
 18. The method of claim 17, wherein top surfaces of thecapping patterns are level with the surface of the substrate.
 19. Themethod of claim 17, wherein forming the first mask patterns comprises:forming a plurality of hard masks in the cell region as lines bypatterning the insulation layer, the first hard masks extending acrossthe active regions; forming a spacer layer on the substrate such thatthe spacer layer conforms to the shape of the first hard masks;depositing an insulation material on the spacer layer so that spacesbetween the first hard masks can be filled with the insulation material;forming a plurality of spacer patterns on sidewalls of the first hardmasks and a plurality of second hard masks among the spacer patterns byetching the insulation material and the spacer layer until top surfacesof the first hard masks are exposed; and sequentially removing portionsof the spacer patterns between the first hard masks and the respectivesecond hard masks and the conductive layer.
 20. The method of claim 17,wherein the spacer layer comprises a material having an etch selectivityto the insulation layer and the insulation material.
 21. The method ofclaim 17, wherein the top surfaces of the first hard masks, top surfacesof the spacer patterns, and top surfaces of the second hard masks arelevel with one another.
 22. The method of claim 17, further comprisingforming an insulation layer for forming a gate on inner sidewalls ofeach of the trenches, after the forming of the trenches.